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ZXTP25020DFH 20V, SOT23, PNP medium power transistor
Summary
BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m PD = 1.25W Complementary part number ZXTN25020DFH
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * * High power dissipation SOT23 package High peak current High gain Low saturation voltage
E
E
Applications
* * * MOSFET gate drivers Power switches Motor control
C B Pinout - top view
Ordering information
Device ZXTP25020DFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000
Device marking
1A3
Issue 1 - July 2006
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ZXTP25020DFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEO VECO VEBO IC IB ICM PD Limit -25 -20 -4 -7 -4 -1 -10 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds.
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ZXTP25020DFH
Characteristics
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ZXTP25020DFH
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Symbol BVCBO Min. -25 -20 -7 -4 Typ. -55 -45 -8.3 -8.5 <-1 -50 -20 Emitter cut-off current Collector-emitter saturation voltage IEBO VCE(sat) <-1 -50 -150 -180 -155 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 300 200 70 -960 -815 450 310 100 20 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO t(d) t(r) t(s) t(f) 290 21 14.2 16.3 186 32.7 30 MHz pF -50 -60 -210 -240 -180 -1050 -900 900 Max. Unit V V V V nA A nA mV mV mV mV mV mV Conditions IC = -100 A IC = -10mA (*) IE = -100 A IC = -100 A(*) VCB = -20V VCB = -20V, Tamb= 100C VEB = -5.6V IC = -1A, IB = -100mA(*) IC = -1A, IB = -10mA(*) IC = -2A, IB = -40mA(*) IC = -4A, IB = -400mA(*) IC = -4A, IB = -400mA(*) IC = -4A, VCE = -2V(*) IC = -10mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -4A, VCE = -2V(*) IC = -10A, VCE = -2V(*) IC = -50mA, VCE = -10V f = 50MHz VCB = -10V, f = 1MHz(*) VCC = -10V. IC = -1A, IB1 = IB2= -50mA.
Collector-emitter breakdown BVCEO voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Collector cut-off current BVEBO BVECO ICBO
NOTES: (*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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ZXTP25020DFH
Typical characteristics
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ZXTP25020DFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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